FCU900N60Z 600v n-channel mosfet ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 www.fairchildsemi.com 1 march 2013 mosfet maximum ratings t c = 25 o c unless otherwise noted* thermal characteristics symbol parameter FCU900N60Z unit v dss drain to source voltage 600 v v gss gate to source voltage -dc 20 v -ac (f > 1 hz) 30 i d drain current -continuous (t c = 25 o c) 4.5 a -continuous (t c = 100 o c) 2.8 i dm drain current - pulsed (note 1) 13.5 a e as single pulsed avalanche energy (note 2) 47.5 mj i ar avalanche current (note 1) 1 a e ar repetitive avalanche energy (note 1) 0.52 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns mosfet dv/dt 100 p d power dissipation (t c = 25 o c) 52 w - derate above 25 o c0.42w/ o c t j , t stg operating and storage temperature range -55 to +150 o c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 o c symbol parameter FCU900N60Z unit r jc thermal resistance, junction to case 2.4 o c/w r ja thermal resistance, junction to ambient 100 FCU900N60Z n-channel superfet ? ii mosfet 600 v, 4.5 a, 900 m features ?675 v @t j = 150 o c ?max. r ds(on) = 900 m ? ultra low gate charge (typ. q g = 13 nc) ? low effective output capacitance (typ. c oss .eff = 49 pf) ? 100% avalanche tested ? esd improved capacity applications ? lcd / led / pdp tv and monitor lighting ? solar inverter ? charger description superfet ? ii mosfet is fairchild semiconductor ? ?s first gen- eration of high voltage super-juncti on (sj) mosfet family that is utilizing charge balance technol ogy for outstanding low on-resis- tance and lower gate charge per formance.this advanced tech- nology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. cons equently, superfetii mosfet is suitable for various ac/dc power conversion for system minia- turization and higher efficiency. i-pak g s d g s d
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 2 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 package marking and ordering information electrical characteristics t c = 25 o c unless otherwise noted off characteristics on characteristics dynamic characteristics switching characteristics drain-source diod e characteristics device marking device package reel size tape width quantity FCU900N60Z FCU900N60Z i-pak - - 75 symbol parameter test conditions min. typ. max. unit bv dss drain to source breakdown voltage i d = 1 ma, v gs = 0 v, t j = 25 o c 625 - - v i d = 1 ma, v gs = 0 v, t j = 150 o c 675 - - v bv dss t j breakdown voltage temperature coefficient i d = 1 ma, referenced to 25 o c - 0.72 - v/ o c bv ds drain to source avalanche breakdown voltage v gs = 0 v, i d = 4.5 a - 700 - v i dss zero gate voltage drain current v ds = 600 v, v gs = 0 v - - 1 a v ds = 600 v, t c = 125 o c--10 i gss gate to body leakage current v gs = 20 v, v ds = 0 v - - 10 a v gs(th) gate threshold voltage v gs = v ds , i d = 250 a2.5-3.5v r ds(on) static drain to source on resistance v gs = 10 v, i d = 2.3 a - 0.82 0.90 g fs forward transconductance v ds = 20 v, i d = 2.3 a (note 4) -4.6-s c iss input capacitance v ds = 25 v, v gs = 0 v f = 1 mhz - 534 710 pf c oss output capacitance - 399 530 pf c rss reverse transfer capacitance - 19.7 30 pf c oss output capacitance v ds = 380 v, v gs = 0 v, f = 1.0 mhz - 11.1 - pf c oss eff. effective output capacitance v ds = 0 v to 480 v, v gs = 0 v - 48.6 - pf q g(tot) total gate charge at 10v v ds = 380 v, i d = 2.3 a v gs = 10 v (note 4) - 13.1 17 nc q gs gate to source gate charge - 2.2 - nc q gd gate to drain ?miller? charge - 4.5 - nc esr equivalent series resistance drain open - 2.4 - t d(on) turn-on delay time v dd = 380 v, i d = 2.3 a v gs = 10 v, r g = 4.7 (note 4) -10.932ns t r turn-on rise time - 5.3 21 ns t d(off) turn-off delay time - 33.6 77 ns t f turn-off fall time - 11.9 34 ns i s maximum continuous drain to source diode forward current - - 4.5 a i sm maximum pulsed drain to source diode forward current - - 13.5 a v sd drain to source diode forward voltage v gs = 0 v, i sd = 2.3 a - - 1.2 v t rr reverse recovery time v gs = 0 v, i sd = 2.3 a di f /dt = 100 a/ s (note 4) - 156 - ns q rr reverse recovery charge - 1.3 - nc notes: 1. repetitive rating: pulse width li mited by maximum junction temperature 2. i as = 1.0 a, v dd = 50v, r g = 25 , starting t j = 25 c 3. i sd 2.3 a, di/dt 200 a/ s, v dd bv dss , starting t j = 25 c 4. essentially independent of operating temperature
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 3 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs. source current and temperature figure 5. capacitance characteristics figure 6. gate charge characteristics 0.2 1 10 20 0.1 1 10 20 *notes: 1. 250 s pulse test 2. t c = 25 o c i d , drain current[a] v ds , drain-source voltage[v] v gs = 10.0v 8.0v 7.0v 6.0v 5.5v 5.0v 4.5v 4.0v 2468 0.1 1 10 20 -55 o c 150 o c *notes: 1. v ds = 20v 2. 250 s pulse test 25 o c i d , drain current[a] v gs , gate-source voltage[v] 0.4 0.8 1.2 1.6 0.1 1 10 50 *notes: 1. v gs = 0v 2. 250 s pulse test 150 o c i s , reverse drain current [a] v sd , body diode forward voltage [v] 25 o c 036912 0.4 0.8 1.2 1.6 2.0 *note: t c = 25 o c v gs = 20v v gs = 10v r ds(on) [ ], drain-source on-resistance i d , drain current [a] 0.1 1 10 100 600 0.5 1 10 100 1000 10000 c oss c iss c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd *note: 1. v gs = 0v 2. f = 1mhz c rss capacitances [pf] v ds , drain-source voltage [v] 03691215 0 2 4 6 8 10 *note: i d = 2.3a v ds = 120v v ds = 300v v ds = 480v v gs , gate-source voltage [v] q g , total gate charge [nc]
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 4 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. eoss vs. drain to source voltage -80 -40 0 40 80 120 160 0.5 1.0 1.5 2.0 2.5 *notes: 1. v gs = 10v 2. i d = 2.3a r ds(on) , [normalized] drain-source on-resistance t j , junction temperature [ o c] -80 -40 0 40 80 120 160 0.90 0.95 1.00 1.05 1.10 1.15 *notes: 1. v gs = 0v 2. i d = 1ma bv dss , [normalized] drain-source breakdown voltage t j , junction temperature [ o c] 25 50 75 100 125 150 0 1 2 3 4 5 r jc = 1.5 o c/w v gs = 10v i d , drain current [a] t c , case temperature [ o c] 0.1 1 10 100 1000 0.01 0.1 1 10 20 10 s 100 s 1ms 10ms i d , drain current [a] v ds , drain-source voltage [v] operation in this area is limited by r ds(on) *notes: 1. t c = 25 o c 2. t j = 150 o c 3. single pulse dc 0 100 200 300 400 500 600 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 e oss , [ j] v ds , drain to source voltage [v]
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 5 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 typical performance characteristics (continued) figure 12. transi ent thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 0.1 1 3 0.01 0.1 0.2 0.05 0.02 *notes: 1. z jc (t) = 2.4 o c/w max. 2. duty factor, d= t 1 /t 2 3. t jm - t c = p dm * z jc (t) 0.5 single pulse thermal response [z jc ] rectangular pulse duration [sec] t 1 p dm t 2
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 6 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 7 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 peak diode recovery dv/dt test circuit & waveforms dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- dut v ds + _ driver r g same type as dut v gs ? dv/dt controlled by r g ?i sd controlled by pulse period v dd l l i sd 10v v gs ( driver ) i sd ( dut ) v ds ( dut ) v dd body diode forward voltage drop v sd i fm , body diode forward current body diode reverse current i rm body diode recovery dv/dt di/dt d = gate pulse width gate pulse period -------------------------- d = gate pulse width gate pulse period --------------------------
FCU900N60Z 600v n-channel mosfet www.fairchildsemi.com 8 ?2012 fairchild semiconductor corporation FCU900N60Z rev. c1 mechanical dimensions dimensions in millimeters
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